Document
Features
• Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture
– Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout • Fast Word Program Time – 12 µs • Fast Sector Erase Time – 300 ms • Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector – Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending
Programming of Any Other Byte/Word • Low-power Operation
– 12 mA Active – 13 µA Standby • Data Polling, Toggle Bit, Ready/Busy for End of Program Detection • VPP Pin for Write Protection • RESET Input for Device Initialization • Sector Lockdown Support • TSOP and CBGA Package Options • Top or Bottom Boot Block Configuration Available • 128-bit Protection Register • Minimum 100,000 Erase Cycles • Common Flash In.