16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Description
Features
Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) Access Time – 70 ns Sector Erase Architecture
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time – 20 µs Fast Sector Erase Time – 300 ms Dual-plane Organiz...
