16-Megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Description
Features
2.7V to 3.3V Read/Write Access Time - 90 ns Sector Erase Architecture
– Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
– Two 16K Word (32K Byte) Sectors with Individual Write Lockout Fast Word Program Time - 20 µs Fast Sector Erase Time - 200 ms Dual Plane ...
