AT49BV080

Features Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 120 ns Internal Program Control and Timer 16K Bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte-By-Byte Programming - 30 µs/Byte Typical Hardware Data Protection DATA Polling For End Of Program Detection Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current Typical 10,000 Write Cycles Small Packaging – 8 x 14 mm CBGA Description The AT49BV/LV080(T) are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 50 µA. (continued) Pin Configurations Pin Name Function TSOP Top View T...