AT49BV040A

Features Single Supply for Read and Write: 2.7 to 3.6V Fast Read Access Time – 70 ns Internal Program Control and Timer Sector Architecture – One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks – Eight Main Memory Blocks (One 32K Bytes, Seven 64K Bytes) Fast Erase Cycle Time – 7 Seconds Byte-by-Byte Programming – 30 µs/Byte Typical Hardware Data Protection DATA Polling for End of Program Detection Low Power Dissipation – 15 mA Active Current – 50 µA CMOS Standby Current Typical 10,000 Write Cycles Description The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over the commercial temperature range. Pin Configurations Pin Name A0 - A18 CE OE WE I/O0 - I/O7 Function Addre...