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AT49BV004

4-Megabit (512K x 8/256K x 16) CMOS Flash Memory

Description

Features 2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks – One 240K Words (480K bytes) Main Memory Array Block Fast Sector Erase Time - 10 seconds Byte-by-Byte or Word-By-Wor...

ATMEL

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