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MIP2E2DMY
Silicon MOSFET
Description
MIP2E2DMY MOS (IPD) ■ ■ ■ Ta = 25°C ± 3°C VD 700 V VC 10 V ID 0.585 A IDP 0.82 A IC 0.1 A Tch 150 °C Tstg −55 ∼ +150 °C ■ TO-220-A2 1: Control 2: Source 3: Drain ■ : MIP2E2DMY ■ Control 1 Max Duty Clock Sawtooth SQ RQ SQ V-I R Q : 2010 3 SLB00041BJD 3 Drain MOSFET 2 Source 1 MIP2E2DMY ■ TC = 25°C ± 2°C PWM / ) *: * * fOSC MAXD...
Panasonic
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