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MIP2E3DMU

Silicon MOSFET

Description

MIP2E3DMU MOS (IPD) ■ ■ ■ Ta = 25°C ± 3°C VD 700 V VC 10 V ID 1.15 A IDP 1.60 A IC 0.1 A Tch 150 °C Tstg −55 ∼ +150 °C ■ U-G4 1: Control 2: Source 3: Drain ■ : MIP2E3D ■ Control 1 Max Duty Clock Sawtooth SQ RQ SQ V-I R Q : 2010 3 SLB00044BJD 3 Drain MOSFET 2 Source 1 MIP2E3DMU ■ TC = 25°C ± 2°C PWM / ) *: * * fOSC MAXDC GPWM ...

Panasonic

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