BZV37

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D169 BZV37 Bidirectional voltage regulator diode Product specification Supersedes data of April 1992 1996 Apr 26 Philips Semiconductors Product specification Bidirectional voltage regulator diode FEATURES Low total power dissipation: max. 400 mW Working voltage: nom. 6.5 V Non-repetitive peak reverse power dissipation: max. 40 W Bidirectional. MAM247 BZV37 DESCRIPTION Low-power voltage regulator diode in an hermetically sealed leaded glass SOD68 (DO-34) package. handbook, halfpage APPLICATIONS Voltage stabilizer and transient protection element. The diode is type branded. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IZ IZSM PARAMETER continuous working current non-repetitive peak reverse current t = 30 s; t1 = 8 µs; t2 = 20 µs; Tj = 25 °C prior to surge; see Fig.3 t = 30 s; t1 = 10 µs; t2 = 1000 µs; Tj = 25 °C prior to surge; see Fig.3 Ptot PZSM Tstg Tj total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature Tamb ≤ 25 °C tp = 100 µs square wave; Tj = 25 °C prior to surge; see Fig.2 CONDITIONS MIN. − − − − − −65 − MAX. 50 7 2 400 40 +200 200 A A mW W °C °C UNIT mA ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VZ V(CL)R PARAMETER working voltage clamping voltage CONDITIONS IZtest = 5 mA IZSM = 7 A; t1 = 8 µs; t2 = 20 µs IZSM = 2 A...