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BZV10 Dataheets PDF



Part Number BZV10
Manufacturers NXP
Logo NXP
Description Voltage reference diodes
Datasheet BZV10 DatasheetBZV10 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET age M3D050 BZV10 to BZV14 Voltage reference diodes Product specification Supersedes data of March 1991 1996 Mar 21 Philips Semiconductors Product specification Voltage reference diodes FEATURES • Temperature compensated • Reference voltage range: 5.9 to 6.5 V (typ. 6.2 V) • Low temperature coefficient range: max. 0.0005 to 0.01 %/K. k handbook, halfpage BZV10 to BZV14 DESCRIPTION Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package.

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DISCRETE SEMICONDUCTORS DATA SHEET age M3D050 BZV10 to BZV14 Voltage reference diodes Product specification Supersedes data of March 1991 1996 Mar 21 Philips Semiconductors Product specification Voltage reference diodes FEATURES • Temperature compensated • Reference voltage range: 5.9 to 6.5 V (typ. 6.2 V) • Low temperature coefficient range: max. 0.0005 to 0.01 %/K. k handbook, halfpage BZV10 to BZV14 DESCRIPTION Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package. a MAM216 APPLICATION • Voltage reference sources in measuring instruments such as digital voltmeters. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IZ Ptot Tstg Tj Tamb PARAMETER working current total power dissipation storage temperature junction temperature operating ambient temperature Tamb = 50 °C CONDITIONS MIN. − − −65 − 0 MAX. 50 400 +200 200 +70 UNIT mA mW °C °C °C 1996 Mar 21 2 Philips Semiconductors Product specification Voltage reference diodes ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Vref ∆Vref PARAMETER reference voltage reference voltage excursion BZV10 BZV11 BZV12 BZV13 BZV14 SZ temperature coefficient BZV10 BZV11 BZV12 BZV13 BZV14 rdif Notes differential resistance IZ = 2 mA; see Fig.3 IZ = 2 mA: see Fig.2; notes 1 and 2 CONDITIONS IZ =2 mA IZ =2 mA; test points for Tamb: 0; +25; +70 °C; notes 1 and 2 MIN. 5.9 − − − − − − − − − − − BZV10 to BZV14 TYP. 6.2 − − − − − − − − − − 20 MAX. 6.5 46 23 9 4.6 2.3 0.01 0.005 0.002 0.001 50 V UNIT mV mV mV mV mV %/K %/K %/K %/K Ω 0.0005 %/K 1. The quoted values of ∆Vref are based on a constant current IZ. Two factors can cause ∆Vref to change, namely the differential resistance rdif and the temperature coefficient SZ. a) As the max. rdif of the device can be 50 Ω, a change of 0.01 mA in the current through the reference diode will result in a ∆Vref of 0.01 mA × 50 Ω = 0.5 mV. This level of ∆Vref is not significant on a BZV10 (∆Vref < 46 mV), it is however very significant on a BZV14 (∆Vref < 2.3 mV). b) The temperature coefficient of the reference voltage SZ is a function of IZ. Reference diodes are classified at the specified test current, and the SZ of the reference diode will be different at different levels of IZ. The absolute value of IZ is important, however, the stability of IZ, once the level has been set, is far more significant. This applies particularly to the BZV13 and BZV14. The effect of the stability of IZ on SZ is shown in Fig.2. 2. All reference diodes are characterized by the ‘box method’. This guarantees a maximum voltage excursion (∆Vref) over the specified temperature range, at the specified test current (IZ), verified by tests at indicated temperature points within the range. VZ is measured and recorded at each temperature specified. The ∆Vref between the highest and lowest values must not exceed the maximum ∆Vref given. Therefore the temperature coefficient is only given as V ref1 – V ref2 100 a reference. It may be derived from: S Z = ------------------------------------- × ------------------- %/K T amb2 – T amb1 V ref nom THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS 8 mm from the body lead length 10 mm VALUE 300 375 UNIT K/W K/W 1996 Mar 21 3 Philips Semiconductors Product specification Voltage reference diodes GRAPHICAL DATA BZV10 to BZV14 handbook, halfpage 0.002 ∆SZ (%/K) 0.001 MBG533 MBG532 handbook, halfpage 30 rdif (Ω) 25 0 20 −0.001 15 −0.002 −0.003 1.5 2.0 IZ (mA) 2.5 10 1.5 2.0 IZ (mA) 2.5 Fig.2 Temperature coefficient change as a function of working current; typical values. Fig.3 Differential resistance as a function of working current; typical values. 1996 Mar 21 4 Philips Semiconductors Product specification Voltage reference diodes PACKAGE OUTLINE BZV10 to BZV14 handbook, full pagewidth 0.55 max 1.6 max 25.4 min 3.04 max 25.4 min MSA212 - 1 Dimensions in mm. The marking band indicates the cathode. The diodes are type branded. Fig.4 SOD68 (DO-34). DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfu.


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