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S80N08R Dataheets PDF



Part Number S80N08R
Manufacturers SI-TECH
Logo SI-TECH
Description N-Channel MOSFET
Datasheet S80N08R DatasheetS80N08R Datasheet (PDF)

SI-TECH SEMICONDUCTOR CO.,LTD S80N08R/S/RN/RP N-Channel MOSFET Features █ 80V,80A,Rds(on)(typ)=6.4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automot.

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SI-TECH SEMICONDUCTOR CO.,LTD S80N08R/S/RN/RP N-Channel MOSFET Features █ 80V,80A,Rds(on)(typ)=6.4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products. Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS PD TJ TSTG Drain-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25℃) Derating Factor above 25℃ Operating Junction Temperature Range Storage Temperature .


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