Silicon N-channel MOS FET
DReovcisNioon. . T2 T4-EA-13170
FK8V03060L
Silicon N-channel MOS FET
For lithium-ion secondary battery protection circu...
Description
DReovcisNioon. . T2 T4-EA-13170
FK8V03060L
Silicon N-channel MOS FET
For lithium-ion secondary battery protection circuit For DC-DC Converter
Features Low drain-source On-state Resistance
RDS(on) typ. = 22 m (VGS = 4.5 V) High-speed switching : Qg = 3.8 nC Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol: 3F
Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Rating
Unit
Drain-source Voltage
VDS
33
V
Gate-source Voltage Drain Current (Steady State) *1 Drain Current (t = 10 s) *1 Drain Current (Pulsed) *1,*2 Source Current (Pulsed)
(Body Diode) *1,*2 Total Power Dissipation (Steady State) *1 Total Power Dissipation (t = 10 s) *1
VGS
ID
IDp ISp (BD)
PD
20 6.5 8 26
6.5
1 1.5
V A W
Channel Temperature
Tch 150
C
Operating Ambient Temperature
Topr -40 to + 85
C
Storage Temperature Range
Tstg -55 to +150 ...
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