FK8V0304

This product complies with the RoHS Directive (EU 2002/95/EC). FK8V0304 Silicon N-channel MOS FET For DC-DC converter circuits  Overview N-channel single type, MOS FET in a compact surface mount type package.  Features  Low drain-source ON resistance: RDS(on) typ. = 7 mW (VGS = 10 V)  High-speed switching: Qg = 7.2 nC  Small size surface mounting package: WMini8-F1  Contributes to mount area reduction  Eco-friendly Halogen-free package  Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current *1 t = 10 s VDSS VGSS ID 33 ±20 10 12 V V A Peak drain current *1, 2 Souce current (Body diode) Power dissipation *1 t = 10 s IDP IS (BD) PD 40 10 1 1.5 A A W Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Note) *1: Mounted on a glass epoxy PC board: 25.4 mm × 25...