Document
Light Emitting Diodes
LNJ853W86RA
Hight Bright Surface Mounting Chip LED
SV (Side View) -0.5 Type
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Power dissipation
PD 55 mW
Forward current
IF 20 mA
Pulse forward current *
IFP 60 mA
Reverse voltage
VR 4
V
Operating ambient temperature
Topr –30 to +85 °C
Storage temperature
Tstg –40 to +100 °C
Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.
Electro-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Luminous intensity *1 Reverse current Forward voltage Peak emission wavelength Dominant emission wavelength *2 Spectral half band width
IO IF = 5 mA IR VR = 4 V VF IF = 5 mA λP IF = 5 mA λd IF = 5 mA Δλ IF = 5 mA
Note) *1: Measurement tolerance: ±20% *2: Measurement tolerance: ±2 nm
IO IF
100
IF VF
100
50 50 30 30
Lighting Color Soft Orange
Min Typ Max Unit
7.0 9.0 23.0 mcd
100 µA
1.95 2.30
V
610 nm
597 605 610
nm
15 .