LN1251CALTR

Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). ForwardcurrentIFIF( (mAm)A) (planed maintMeaniantnecRneelataFnytoicprveeew/,alrDuidmsmaciciunonrotrnueteisnntinanuItnFeecnd(seiitmtnyyAcl)p(ue%,d)eplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.dDisMcaionnttiennuaendtype)ce/ LN1251CALTR Hight Bright Surface Mounting Chip LED J Type  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Power dissipation PD Forward current IF Pulse forward current * IFP Reverse voltage VR Operating ambient temperature Topr Storage temperature Tstg Note) *: The condition of IFP is duty 10%, Pulse width 1 msec. Rating 45 15 60 3 –25 to +80 –30 to +85 Unit mW mA mA V °C °C  Electro-Optical Characteristics Ta = 25°C Parameter Symbol Conditions Luminous intensity Reverse current Forward voltage Peak emission wavelength Spectral half band width IO IF = 10 mA IR VR = 3 V VF IF = 15 mA λP IF = 15 mA...