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TLP183 Dataheets PDF



Part Number TLP183
Manufacturers Toshiba
Logo Toshiba
Description Photocouplers
Datasheet TLP183 DatasheetTLP183 Datasheet (PDF)

Photocouplers Infrared LED & Photo Transistor TLP183 TLP183 1. Applications • Office Equipment • Programmable Logic Controllers (PLCs) • AC Adapters • I/O Interface Boards 2. General TLP183 is a low input type phototransistor coupler that consists of a photo transistor optically coupled to an infrared LED in a SO6 package. TLP183 is guaranteed high isolation voltage (3750 Vrms) and wide operating temperature (Ta = -55 to 125 �). TLP183 is smaller than DIP package, it's suitable for high densit.

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Photocouplers Infrared LED & Photo Transistor TLP183 TLP183 1. Applications • Office Equipment • Programmable Logic Controllers (PLCs) • AC Adapters • I/O Interface Boards 2. General TLP183 is a low input type phototransistor coupler that consists of a photo transistor optically coupled to an infrared LED in a SO6 package. TLP183 is guaranteed high isolation voltage (3750 Vrms) and wide operating temperature (Ta = -55 to 125 �). TLP183 is smaller than DIP package, it's suitable for high density surface mounting applications such as programmable controllers. 3. Features (1) Collector-emitter voltage: 80 V (min) (2) Current transfer ratio: 50 % (min) (@IF = 0.5 mA, VCE = 5 V) GB Rank: 100 % (min) (@IF = 0.5 mA, VCE = 5 V) (3) Isolation voltage: 3750 Vrms (min) (4) Operating temperature: -55 to 125 � (5) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4). 4. Packaging and Pin Assignment 11-4M1S ©2016-2020 1 Toshiba Electronic Devices & Storage Corporation 1: Anode 3: Cathode 4: Emitter 6: Collector Start of commercial production 2013-09 2020-11-18 Rev.8.0 5. Mechanical Parameters TLP183 Characteristics Creepage distances Clearance Internal isolation thickness Min Unit 5.0 mm 5.0 0.4 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Note Rating Unit LED Input forward current IF 50 mA Input forward current (pulsed) Input forward current derating (Ta ≥ 90 �) IFP ∆IF/∆Ta (Note 1) 1 -1.11 A mA/� Input reverse voltage VR 5 V Input power dissipation Input power dissipation derating (Ta ≥ 90 �) PD ∆PD/∆Ta 100 -2.22 mW mW/� Junction temperature Tj 135 � Detector Collector-emitter voltage VCEO 80 V Emitter-collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation PC 150 mW Collector power dissipation derating (Ta ≥ 25 �) ∆PC/∆Ta -1.36 mW/� Junction temperature Common Operating temperature Storage temperature Tj 135 � Topr -55 to 125 � Tstg -55 to 125 � Lead soldering temperature (10 s) Tsol 260 � Total power dissipation Total power dissipation derating (Ta ≥ 25 �) PT ∆PT/∆Ta 200 -1.82 mW mW/� Isolation voltage AC, 60 s, R.H. ≤ 60 % BVS (Note 2) 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) ≤ 0.1 ms, f = 100 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. ©2016-2020 2 Toshiba Electronic Devices & Storage Corporation 2020-11-18 Rev.8.0 TLP183 7. Electrical Characteristics (Unless otherwise specified, Ta = 25 �) Characteristics LED Input forward voltage Input reverse current Input capacitance Detector Collector-emitter breakdown voltage Emitter-collector breakdown voltage Dark Current Collector-emitter capacitance Symbol VF IR Ct V(BR)CEO Note Test Condition IF = 10 mA VR = 5 V V = 0 V, f = 1 MHz IC = 0.5 mA V(BR)ECO IE = 0.1 mA IDARK CCE VCE = 48 V VCE = 48 V, Ta = 85 � V = 0 V, f = 1 MHz Min Typ. Max Unit 1.1 1.25 1.4 V � � 5 µA � 30 � pF 80 � � V 7 � � V � 0.01 0.08 µA � 2 50 � 10 � pF 8. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Note Test Condition Current transfer ratio IC/IF (Note 1) IF = 5 mA, VCE = 5 V IF = 5 mA, VCE = 5 V, GB Rank IF = 0.5 mA, VCE = 5 V IF = 0.5 mA, VCE = 5 V, GB Rank Saturated current transfer ratio IC/IF(sat) IF = 1 mA, VCE = 0.4 V IF = 1 mA, VCE = 0.4 V, GB Rank Collector-emitter saturation voltage VCE(sat) IC = 2.4 mA, IF = 8 mA IC = 0.2 mA, IF = 1 mA IC = 0.2 mA, IF = 1 mA, GB Rank OFF-state collector current IC(off) VF = 0.7 V, VCE = 48 V Note 1: See Table 8.1 for current transfer ratio. Min Typ. Max Unit 50 � 600 % 100 � 600 50 � 600 100 � 600 � 60 � 30 � � � � 0.3 V � 0.2 � � � 0.3 � � 10 µA Table 8.1 Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, Ta = 25 �) Rank Rank short code Note Test Condition Current .


MN103E010H TLP183 PL3535


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