Document
Photocouplers Infrared LED & Photo Transistor
TLP183
TLP183
1. Applications
• Office Equipment • Programmable Logic Controllers (PLCs) • AC Adapters • I/O Interface Boards
2. General
TLP183 is a low input type phototransistor coupler that consists of a photo transistor optically coupled to an infrared LED in a SO6 package. TLP183 is guaranteed high isolation voltage (3750 Vrms) and wide operating temperature (Ta = -55 to 125 �). TLP183 is smaller than DIP package, it's suitable for high density surface mounting applications such as programmable controllers.
3. Features
(1) Collector-emitter voltage: 80 V (min) (2) Current transfer ratio: 50 % (min) (@IF = 0.5 mA, VCE = 5 V)
GB Rank: 100 % (min) (@IF = 0.5 mA, VCE = 5 V) (3) Isolation voltage: 3750 Vrms (min) (4) Operating temperature: -55 to 125 � (5) Safety standards
UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory
Note 1: When a VDE approved type is needed, please designate the Option (V4).
4. Packaging and Pin Assignment
11-4M1S
©2016-2020
1
Toshiba Electronic Devices & Storage Corporation
1: Anode 3: Cathode 4: Emitter 6: Collector
Start of commercial production
2013-09 2020-11-18
Rev.8.0
5. Mechanical Parameters
TLP183
Characteristics
Creepage distances Clearance Internal isolation thickness
Min
Unit
5.0
mm
5.0
0.4
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Note
Rating
Unit
LED Input forward current
IF
50
mA
Input forward current (pulsed) Input forward current derating
(Ta ≥ 90 �)
IFP ∆IF/∆Ta
(Note 1)
1 -1.11
A mA/�
Input reverse voltage
VR
5
V
Input power dissipation
Input power dissipation derating
(Ta ≥ 90 �)
PD ∆PD/∆Ta
100 -2.22
mW mW/�
Junction temperature
Tj
135
�
Detector Collector-emitter voltage
VCEO
80
V
Emitter-collector voltage
VECO
7
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Collector power dissipation derating
(Ta ≥ 25 �)
∆PC/∆Ta
-1.36
mW/�
Junction temperature Common Operating temperature
Storage temperature
Tj
135
�
Topr
-55 to 125
�
Tstg
-55 to 125
�
Lead soldering temperature
(10 s)
Tsol
260
�
Total power dissipation
Total power dissipation derating
(Ta ≥ 25 �)
PT ∆PT/∆Ta
200 -1.82
mW mW/�
Isolation voltage
AC, 60 s, R.H. ≤ 60 %
BVS
(Note 2)
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 0.1 ms, f = 100 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
©2016-2020
2
Toshiba Electronic Devices & Storage Corporation
2020-11-18 Rev.8.0
TLP183
7. Electrical Characteristics (Unless otherwise specified, Ta = 25 �)
Characteristics
LED Input forward voltage Input reverse current Input capacitance
Detector Collector-emitter breakdown voltage Emitter-collector breakdown voltage Dark Current
Collector-emitter capacitance
Symbol
VF IR Ct V(BR)CEO
Note
Test Condition
IF = 10 mA VR = 5 V V = 0 V, f = 1 MHz IC = 0.5 mA
V(BR)ECO
IE = 0.1 mA
IDARK CCE
VCE = 48 V VCE = 48 V, Ta = 85 � V = 0 V, f = 1 MHz
Min Typ. Max Unit
1.1 1.25 1.4
V
�
�
5
µA
�
30
�
pF
80
�
�
V
7
�
�
V
�
0.01 0.08 µA
�
2
50
�
10
�
pF
8. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol Note
Test Condition
Current transfer ratio
IC/IF (Note 1) IF = 5 mA, VCE = 5 V
IF = 5 mA, VCE = 5 V, GB Rank
IF = 0.5 mA, VCE = 5 V
IF = 0.5 mA, VCE = 5 V, GB Rank
Saturated current transfer ratio
IC/IF(sat)
IF = 1 mA, VCE = 0.4 V
IF = 1 mA, VCE = 0.4 V, GB Rank
Collector-emitter saturation voltage VCE(sat)
IC = 2.4 mA, IF = 8 mA
IC = 0.2 mA, IF = 1 mA
IC = 0.2 mA, IF = 1 mA, GB Rank
OFF-state collector current
IC(off)
VF = 0.7 V, VCE = 48 V
Note 1: See Table 8.1 for current transfer ratio.
Min Typ. Max Unit
50
�
600
%
100
�
600
50
�
600
100
�
600
�
60
�
30
�
�
�
�
0.3
V
�
0.2
�
�
�
0.3
�
�
10
µA
Table 8.1 Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, Ta = 25 �)
Rank
Rank short code
Note
Test Condition
Current .