RCR1515SI
N-Channel Enhancement Mode Field Effect Transistor
z Features 20V/5.1A RDS(ON) = 28mΩ @ VGS = 4.5V RDS(ON) =...
RCR1515SI
N-Channel Enhancement Mode Field Effect
Transistor
z Features 20V/5.1A RDS(ON) = 28mΩ @ VGS = 4.5V RDS(ON) = 38mΩ @ VGS = 2.5V RDS(ON) = 60mΩ @ VGS = 1.8V SOT23 Package
z Pin Configurations See Diagram below (top view)
z General Description The RCR1515SI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
z Package Information
③ ①②
SOT23 Unit:mm
z Absolute Maximum Ratings @TA=25℃ unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current (Continuous)
TA=25°C TA=70°C
ID
Ratings 20
±12 5.1 4
Unit V V
A
1/5
RCR1515SI
Drain Current (Pulse)
Power Dissipation
TA=25°C
Operating Temperature/ Storage Temperature
IDM PD TJ//TSTG
20 1 -55~150
A W ℃
z Electrical Characteristics @TA=25℃ unless otherwise noted
Parameter
Symbol
Test Conditions
Min Ty...
