Document
TST002
SEMI CONDUCTOR
MJE13002
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.
Absolute Maximum Ratings
Symbol VCES VCEO VEBO IC ICP IB IBM
PC
TJ TSTG
Parameter Collector-Emitter Voltage
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature
Storage Temperature
Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink)
Test Conditions VBE = 0 IB = 0 IC = 0
tP = 5ms
Value 600
400 9.0 1.25 2.5
12 0.8 - 40 ~ 150
- 40 ~ 150
Units V
V V A A A A
W
℃ ℃
TST002B1
Page 1
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TST002
SEMI CONDUCTOR
MJE13002
Electrical Characteristics.