Hi-Reliability Optically Coupled Isolator
3C91C, 3C92C (TX), 3N243, 3N244, 3N245 (TX), 3N262
Features: • TO-72 hermetically sealed package • 1 kVDC electrical isolation • High current transfer ratio • TX devices processed to MIL-PRF-19500
Description: Each device is a high reliability optically coupled isolator that consists of an infrared emitting diode and a NPN silicon phototransistor which are mounted in a hermetically sealed TO-72 package. The 3C91C and 3C92C have a 935 nm wavelength, whereas the 3N243, 3N244, 3N245 and 3N262 have an 880 nm wavelength. All devices have 0.50” (12.70 mm) leads. Electrical characteristics vary.
TX devices are processed to OPTEK’s military screening program patterned after MIL-PRF-19500. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Contact your local representative or OPTEK for more information.
Applications:
• High-voltage isolation between input and output
• Electrical isolation in dirty environments
• Industrial equipment • Medical equipment • Office equipment
Part Number
3C91C 3C92C (TX)
3N243 3N244 3N245 (TX) 3N262
LED Peak Wavelength
Sensor
Isolation Voltage (,000)
CTR
IF (mA)
Min / Max Typ / Max
VCE (V) Typ / Max
Lead Length
935 nm
0.3 / 2.0
10 / 50 10 / 50
Transistor
1
880 nm
0.15 / NA 0.3 / NA 0.6 / NA 1.0 / 5.0
3 / 40 1 / 40
0.50" 10 / 30 5 / 30
3C91
1
2
3C92
1
3
4
3
Phototransistor Collector is connected to the Header-Base-Case for ALL versions
3N2XX
2
3
4
2
Pin # 1 2 3 4
3C91 Cathode Collector Emitter Anode
3C92 Cathode Emitter Collector Anode
4
1
3N2XX
Emitter
Cathode
Collector
Anode
General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print.
© TT electronics plc
DIMENSIONS ARE IN: [ MILLIMETERS ] INCHES
TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200
www.ttelectronics.com |
[email protected] Rev B 02/2020 Page 1
Hi-Reliability Optically Coupled Isolator 3C91C, 3C92C (TX), 3N243, 3N244, 3N245 (TX), 3N262
Electrical Specifications
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Operating Temperature Range Storage Temperature Range Input to Output Isolation Voltage Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] Input Diode Forward DC Current Reverse Voltage Power Dissipation Output Phototransistor Continuous Collector Current Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation Notes: 1. Measured with input leads shorted together and output leads shorted together. 2. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 3. Derate linearly 2.0 mW/° C above 25° C. 4. Derate linearly 0.60 mW/° C above 65° C.
IC(ON) vs TA
2.5
Normalized @ 20 mA and 25° C
2.0
IF = 50mA
1.5
-55o C to +125o C -65o C to +150o C
± 1 kVDC(1) 260° C(2)
40 mA 2.0 V
60 mW(3)
30 mA 30 V 5.0 V
200 mW(4)
IC(ON) (mA)
1.0
IF = 20mA
0.5
0.0
-55
-35
-15
+5
+25
+45
+65
+85
+105
+125
+135
TA (°C)
General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print.
© TT electronics plc
TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200
www.ttelectronics.com |
[email protected]
Rev B 02/2020 Page 2
Hi-Reliability Optically Coupled Isolator 3C91C, 3C92C (TX), 3N243, 3N244, 3N245 (TX), 3N262
Electrical Specifications
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP
Input Diode
Forward Voltage
3C91C, 3C92C (TX)
3C91C, 3C92C (TX)
3N243, 3N244, 3N245 (TX)
VF
3N243, 3N244, 3N245 (TX)
3N243, 3N244, 3N245 (TX)
3N262
3N262
3N262
-
-
-
-
0.8
-
1.0
-
0.7
-
0.8
-
1.0
-
0.7
-
VR
Reverse Voltage 3C91C, 3C92C (TX)
7
-
Reverse Current
IR
3C91C, 3C92C (TX) 3N243, 3N244, 3N245 (TX)
3N262
-
-
-
-
-
-
CIN
Diode Capacitance 3C91C, 3C92C (TX)
-
25
Output Phototransistor
V(BR)CEO
Collector-Emitter Breakdown Voltage 3C91C, 3C92C (TX) 3N243, 3N244, 3N245 (TX) 3N262
50
-
30
-
40
-
V(BR)ECO
Emitter-Collector Breakdown Voltage 3C91C, 3C92C (TX) 3N243, 3N244, 3N245 (TX) 3N262
7
-
5
-
7
-
Collector Dark Current
3C91C, 3C92C (TX)
3C91C, 3C92C (TX)
ICEO
3N243, 3N244, 3N245 (TX)
3N243, 3N244, 3N245 (TX)
3N262
3N262
-
-
-
-
-
-
-
-
-
-
-
-
MAX
1.2 1.5 1.3 1.5 1.2 1.5 1.7 1.3
-
1 100 100
-
-
-
10 50 100 100 100 100
UNITS
TEST CONDITIONS
IF = 2 mA
IF = 50 mA
IF = 10 mA
V
IF = 10 mA, TA = -55° C
IF = 10 mA, TA = -100° C
IF = 10 mA
IF = 10 mA, TA = -55° C
IF = 10 mA, TA = -100° C
V
IR = 0.1 m.