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DF2B29FU Dataheets PDF



Part Number DF2B29FU
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description ESD Protection Diodes
Datasheet DF2B29FU DatasheetDF2B29FU Datasheet (PDF)

ESD Protection Diodes Silicon Epitaxial Planar DF2B29FU DF2B29FU 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Features (1) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales. 3. Packaging and Internal Circuit USC 1: Pin 1 2: Pin 2 ©2017 Toshiba Electronic Devices & Storage Corporation 1.

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ESD Protection Diodes Silicon Epitaxial Planar DF2B29FU DF2B29FU 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Features (1) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales. 3. Packaging and Internal Circuit USC 1: Pin 1 2: Pin 2 ©2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-05 2017-12-22 Rev.2.0 DF2B29FU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) Electrostatic discharge voltage(IEC61000-4-2)(Air) VESD (Note 1) ±25 kV Electrostatic discharge voltage(ISO10605)(Contact) Electrostatic discharge voltage(ISO10605)(Air) VESD (Note 2) ±30 kV Peak pulse power Peak pulse current Junction temperature Storage temperature PPK IPP (Note 3) Tj Tstg 140 3 150 -55 to 150 W A   Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: According to IEC61000-4-2. Note 2: According to ISO10605. (@ C = 330 pF, R = 2 kΩ) Note 3: According to IEC61000-4-5. ©2017 Toshiba Electronic Devices & Storage Corporation 2 2017-12-22 Rev.2.0 5. Electrical Characteristics (Unless otherwise specified, Ta = 25) VRWM: Working peak reverse voltage VBR: Reverse breakdown voltage IBR: Reverse breakdown current IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance DF2B29FU Fig. 5.1 Definitions of Electrical Characteristics Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage VRWM    24 V Reverse breakdown voltage VBR IBR = 1 mA 26  32 V Reverse current IR VRWM = 24 V   0.1 µA Clamp voltage VC (Note 1), (Note 3) IPP = 1 A  30  V IPP = 3 A  37 47 Dynamic resistance RDYN (Note 2)   1.1  Ω Total capacitance Ct VR = 0 V, f = 1 MHz  9 10 pF Note 1: Based on IEC61000-4-5 8/20 µs pulse. Note 2: TLP parameter: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using a least-squares fit of TLP characteristics at IPP between 8 A to 16 A. Note 3: Guaranteed by design. ©2017 Toshiba Electronic Devices & Storage Corporation 3 2017-12-22 Rev.2.0 6. Marking Fig. 6.1 Marking 7. Land Pattern Dimensions (for reference only) DF2B29FU Fig. 7.1 Land Pattern Dimensions (Unit: mm) ©2017 Toshiba Electronic Devices & Storage Corporation 4 2017-12-22 Rev.2.0 8. Characteristics Curves (Note) DF2B29FU Fig. 8.1 I - V Fig. 8.2 IR - VR Fig. 8.3 Ct - VR Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2017 Toshiba Electronic Devices & Storage Corporation 5 2017-12-22 Rev.2.0 9. Clamp Voltage VC - Peak Pulse Current (IPP) (Note) DF2B29FU Fig. 9.1 VC - IPP Fig. 9.2 Based on IEC61000-4-5 8/20 µs pulse. (Ed.2) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2017 Toshiba Electronic Devices & Storage Corporation 6 2017-12-22 Rev.2.0 10. ESD Clamp Waveform (Note) DF2B29FU Fig. 10.1 +8 kV Fig. 10.2 -8 kV Fig. 10.3 IEC61000-4-2 (Contact) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2017 Toshiba Electronic Devices & Storage Corporation 7 2017-12-22 Rev.2.0 Package Dimensions DF2B29FU Unit: mm Weight: 4.5 mg (typ.) Nickname: USC Package Name(s) ©2017 Toshiba Electronic Devices & Storage Corporation 8 2017-12-22 Rev.2.0 DF2B29FU RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though.


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