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DF2B36FU

Toshiba Semiconductor

ESD Protection Diodes

ESD Protection Diodes Silicon Epitaxial Planar DF2B36FU DF2B36FU 1. Applications • ESD Protection Note: This product i...


Toshiba Semiconductor

DF2B36FU

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Description
ESD Protection Diodes Silicon Epitaxial Planar DF2B36FU DF2B36FU 1. Applications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Features (1) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales. 3. Packaging and Internal Circuit USC 1: Pin 1 2: Pin 2 ©2016 Toshiba Corporation 1 Start of commercial production 2016-03 2016-03-25 Rev.1.0 DF2B36FU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) Electrostatic discharge voltage (IEC61000-4-2)(Air) VESD (Note 1) ±20 kV Electrostatic discharge voltage (ISO10605)(Contact) Electrostatic discharge voltage (ISO10605)(Air) VESD (Note 2) ±20 kV Peak pulse power (tp = 8/20 µs) Peak pulse current (tp = 8/20 µs) Jun...




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