IGBT
BUP 312
IGBT
• Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated
T...
Description
BUP 312
IGBT
Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated
Type BUP 312
VCE IC 1200V 12A
Package TO-218 AB
Maximum Ratings Parameter
Collector-emitter voltage
Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage
DC collector current TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 90 °C Avalanche energy, single pulse IC = 5 A, VCC = 24 V, RGE = 25 Ω L = 3.3 mH, Tj = 25 °C Power dissipation TC = 25 °C Chip or operating temperature
Storage temperature
Symbol VCE VCGR VGE IC
ICpuls
EAS
Ptot Tj Tstg
Pin 1 G
Pin 2 C
Pin 3 E
Ordering Code Q67040-A4209-A2
Values 1200
Unit V
1200 ± 20
12 8
A
24 16
mJ
10
125 -55 ... + 150 -55 ... + 150
W °C
Semiconductor Group
1
Apr-08-1997
BUP 312
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Thermal Resistance Thermal resistance, chip case
Symbol -
RthJC
Values E 55 / 150 / 56
Un...
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