STGWT60H60DLFB

STGW60H60DLFB STGWT60H60DLFB Trench gate field-stop IGBT, HB series 600 V, 60 A high speed Datasheet - production data TAB 3 2 1 TO-247 TO-3P 3 2 1 Features Maximum junction temperature: TJ = 175 °C High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution Safe paralleling Low thermal resistance Low VF soft recovery co-packaged diode Lead free package Figure 1. Internal schematic diagram C (2 or TAB) Applications Induction heating Microwave oven Resonant converters G (1) E (3) Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution ...