BU508D

Silicon Power Transistor BU508D Technical Data Typical Applications : These devices are designed for horizontal deflection output stages of large screen colour deflection circuits. Specification Fetaures : F High Voltage NPN Silicon Power Transistor F 8 Amp / 1500 V device in TO-218AC package F 125 Watts device F VCEO (sus) 700 V F Collector Emitter Voltage VCE = 1500 V F TO-218 Package for low cost mounting F Available with internal Flyback Diode , “D” suffix Symbol Parameters / Conditions Ratings Maximum Ratings : V CEO(SUS) Collector- Emitter Voltage V CES V EB IC I CM IB I BM Collector- Emitter Voltage Emitter Base Voltage Collector Current – Continuos Peak : Pulse width = 5 ms , Duty Cycle ⊆ 10 % Base Current – Continuos Peak : Pulse width = 5 ms , Duty Cycle ⊆ 10 % 700 Vdc 1500 Vdc 5 Vdc 8 Adc 15 Adc 4 Adc 6 Adc Thermal Characteristics : R thjc TL PD Tj & T Stg Thermal resistance junction to case 1.0 °C/W Maximum Lead Temperature for Soldering Purpose...