UGF09030

UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation. ALL GOLD metal system for highest reliability Industry standard package Suggested alternative to the MRF9030 Internally matched for repeatable manufacturing High gain, high efficiency and high linearity Application Specific Performance, 870MHz GSM: 30 Watts 17.50dB EDGE: 13 Watts 17.50dB IS95 CDMA: 3.5 Watts 17.50 dB CDMA2000: TBD Watts 17.50dB Package Type 440095 PN: UGF9030F Package Type 440109 PN: UGF9030P Page 1 of 7 Specifications subject to change without notice http://cree.com/ UGF09030 Rev. 2 Maximum Ratings UGF09030 Rating Drain to Source Voltage, Gate connected to Source Gate to Source Voltage Total Device Dissipation @ Tcase = 70oC...