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MJD42C

GME

Epitaxial Planar PNP Transistor

Epitaxial Planar PNP Transistor FEATURES z Low formed for surface mount Pb application. Lead-free z Electrically s...


GME

MJD42C

File Download Download MJD42C Datasheet


Description
Epitaxial Planar PNP Transistor FEATURES z Low formed for surface mount Pb application. Lead-free z Electrically similar to popular and TIP42C. z Straight Lead. APPLICATIONS z General purpose amplifier. z Low speed switching applications. Production specification MJD42C TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous ICP Collector Current -Peak IB Base Current -6 A -10 A -2 A PC Collector Power Dissipation 1.5 W RθJC Thermal Resistance,Junciton to Case 6.25 ℃/W RθJA Thermal Resistance,Junciton to Ambient 71.4 ℃/W Tj ,Tstg Junction and Storage temperature range -65 to +150 ℃ V/(W)036 Rev.A www.gmicroelec.com 1 Production specification Epitaxial Planar PNP Transistor MJD42C ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwi...




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