PNP Epitaxial Planar Silicon Transistor
FEATURES
z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE ...
PNP Epitaxial Planar Silicon
Transistor
FEATURES
z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearity.
Pb
Lead-free
Production specification
2SA1700
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO VCEO
Collector-Base Volage Collector-Emitter Voltage
-400 -400
V V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current
-200
mA
ICP Collector Power Dissipation
-400
mA
PC Collector Power Dissipation
1W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
V/(W)005 Rev.A
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PNP Epitaxial Planar Silicon
Transistor
Production specification
2SA1700
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
UNIT
Collector-base breakdown voltage VCBO
Collector-emitter breakdown voltage VCEO
Emitter-base breakdown voltage
VEBO
Collector cut-off current
ICBO
Emitter cut-off cur...