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2SA1700

GME

PNP Epitaxial Planar Silicon Transistor


Description
PNP Epitaxial Planar Silicon Transistor FEATURES z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearity. Pb Lead-free Production specification 2SA1700 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Volage Collector-Emitter V...



GME

2SA1700

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