2SD1803

NPN Epitaxial Planar Silicon Transistors FEATURES z Low collector-to-emitter saturation voltage. Pb z High current and high fT. Lead-free z Excellent linerarity of hFE. z Fast switching time. Production specification 2SD1803 APPLICATIONS z High-Current Switching Applications. TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 60 V VCEO Collector-Emitter Voltage 50 V VEBO IC ICM PC Tj ,Tstg Emitter-Base Voltage Collector Current DC PULSE Collector Power Dissipation Tc=25℃ Ta=25℃ Junction and Storage temperature range 6 5 8 20 1 -40 to +150 V A W ℃ V(W)088 Rev.A www.gmicroelec.com 1 Production specification NPN Epitaxial Planar Silicon Transistors 2SD1803 ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage VCBO Collector-emitter breakdown voltage VCEO...