HY5DV281622DTP

HY5DV281622DTP 128M(8Mx16) GDDR SDRAM HY5DV281622DTP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / Sep. 2003 Revision History Revision No. History 0.1 Defined target spec. 0.2 Supports Pb free parts for each speed grade HY5DV281622DTP Draft Date Remark Aug. 2003 Sep. 2003 Rev. 0.2 / Sep. 2003 2 HY5DV281622DTP DESCRIPTION The Hynix HY5DV281622 is a 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth. The Hynix 8Mx16 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. T...