Document
GAL16V8Z GAL16V8ZD
Zero Power E2CMOS PLD
Features
• ZERO POWER E2CMOS TECHNOLOGY — 100µA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD — Input and Output Latching During Power Down
• HIGH PERFORMANCE E2CMOS TECHNOLOGY — 12 ns Maximum Propagation Delay — Fmax = 83.3 MHz — 8 ns Maximum from Clock Input to Data Output — TTL Compatible 16 mA Output Drive — UltraMOS® Advanced CMOS Technology
• E2 CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — 100% Tested/100% Yields — High Speed Electrical Erasure (<100ms) — 20 Year Data Retention
• EIGHT OUTPUT LOGIC MACROCELLS — Maximum Flexibility for Complex Logic Designs — Programmable Output Polarity — Architecturally Similar to Standard GAL16V8
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS — 100% Functional Testability
• APPLICATIONS INCLUDE: — Battery Powered Systems — DMA Control — State Machine Control — High Speed Graphic.