EBJ81UG8BAS0

PRELIMINARY DATA SHEET 8GB DDR3 SDRAM SO-DIMM EBJ81UG8BAS0 (1024M words × 64 bits, 2 Ranks) Specifications Density: 8GB Organization  1024M words × 64 bits, 2 ranks Mounting 16 pieces of 4G bits DDR3 SDRAM sealed in FBGA Package: 204-pin socket type small outline dual in line memory module (SO-DIMM)  PCB height: 30.0mm  Lead pitch: 0.6mm  Lead-free (RoHS compliant) and Halogen-free Power supply: VDD = 1.5V ± 0.075V Data rate: 1600Mbps/1333Mbps (max.) Backward compatible to1066Mbps/800Mbps/667Mbps Eight internal banks for concurrent operation (components) Interface: SSTL_15 Burst lengths (BL): 8 and 4 with Burst Chop (BC) /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11 /CAS write latency (CWL): 5, 6, 7, 8 Precharge: auto precharge option for each burst access Refresh: auto-refresh, self-refresh Refresh cycles  Average refresh period 7.8µs at 0°C ≤ TC ≤ +85°C 3.9µs at +85°C < TC ≤ +95°C Operating case t...