Power Transistor(60V,3A )
FEATURES
z Low saturation voltage, typically VCE(sat)=0.3V
at IC/IB=2A/0.2A
Pb
z Excellen...
Power
Transistor(60V,3A )
FEATURES
z Low saturation voltage, typically VCE(sat)=0.3V
at IC/IB=2A/0.2A
Pb
z Excellent DC current gain characteristics. Lead-free
z Pc=30W.( TC=25℃)
Production specification
2SD2061
ITO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
80 V
VCEO VEBO IC PC Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Collector Dissipation
DC Pulse
Ta=25℃ TC=25℃
Junction and Storage Temperature
60 V
5V
3 A
6
2 W
30
-55 to +150 ℃
S047 Rev.A
www.gmicroelec.com 1
Production specification
Power
Transistor(60V,3A )
2SD2061
ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions
MIN Typ MAX UNIT
Collector-base Breakdown Voltage BVCBO
IC=50µA,IB=0
80
V
Collector-emitter Breakdown Voltage BVCEO
IC=1mA,IB=0
60
V
Emitter-base Breakdown Voltage
BVEBO
...
