HY57V561620B(L)T-I
4 Banks x 4M x 16Bit Synchronous DRAM
DESCRIPTION
The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16.
HY57V561620B-I is offering fully synchronous operation referenced to a ...
