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VT3060C-E3

Vishay

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VT3060C-E3, VFT3060C-E3, VBT3060C-E3, VIT3060C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trenc...


Vishay

VT3060C-E3

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VT3060C-E3, VFT3060C-E3, VBT3060C-E3, VIT3060C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3060C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT3060C 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VBT3060C PIN 1 K PIN 2 HEATSINK VIT3060C 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY...




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