VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench...
VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 2.5 A
TO-220AB
TMBS ®
ITO-220AB
VT1060C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
VFT1060C
123
PIN 1
PIN 2
PIN 3
FEATURES
Trench MOS
Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TO-263AB K
TO-262AA K
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
2 1
VBT1060C
PIN 1
K
PIN 2
HEATSINK
VIT1060C
3 2 1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max.
Package
2x5A 60 V 100 A 0.50 V
150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Circuit configuration
Common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-...
