PH3134-10M
Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty
Features
NPN silicon microwave power ...
PH3134-10M
Radar Pulsed Power
Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty
Features
NPN silicon microwave power
transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant
Outline Drawing
Rev. V1
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature
Symbol
VCES VEBO
IC PTOT TSTG
TJ
Rating
60 3.0 1.2 70 -65 to +200 200
Units
V V A W °C °C
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage IC = 12.5mA
Collector-Emitter Leakage Current VCE = 36V
Thermal Resistance
Vcc = 36V, Pout = 10W
Input Power
Vcc = 36V, Pout = 10W
Power Gain
Vc...