Document
NVR5124PL
Power MOSFET
−60 V, −1.1 A, 230 mW, Single P−Channel SOT−23 Package
Features
• Trench Technology • NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1, 2)
Steady State
TA = 25°C TA = 100°C TA = 25°C TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
PD
IDM TJ, Tstg
−60 ±20 −1.1
−0.67
−0.47 0.19 −2.5 −55 to +150
V V A
W
A °C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS −0.6 A TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the devi.