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PH2226-110M

MA-COM
Part Number PH2226-110M
Manufacturer MA-COM
Description Radar Pulsed Power Transistor
Published Aug 29, 2017
Detailed Description PH2226-110M Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty Features • NPN silicon microwave power...
Datasheet PDF File PH2226-110M PDF File

PH2226-110M
PH2226-110M

Overview
PH2226-110M Radar Pulsed Power Transistor 110W, 2.
2-2.
6GHz, 100µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/ceramic package • RoHS compliant M/A-COM Products Released, 22 Feb 08 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 65 3.
0 15 583 -65 to ...


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