MMBD452

Production specification Dual Hot-Carrier Diodes FEATURES z Very low capacitance. Pb z Extremely low minority carrier lifetime. Lead-free z Low reverse leakage. z Power dissipation Pd=225mW. MMBD452 APPLICATIONS z Designed primarily for UHF and VHF detector applications. ORDERING INFORMATION Type No. Marking MMBD452 5N SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Continuous reverse voltage VR Power Dissipation Pd Operating junction temperature range TJ Junction and storage temperature TSTG Limits 30 225 -55 to +125 -55 to +150 Unit V mW ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse Breakdown Voltage Forward voltage Reverse current Symbol Min. V(BR) 30 VF IR Typ. 0.38 0.52 13 Max. 0.45 0.6 200 Unit Conditions V IR=10μA V IF=1.0mA IF=10mA nA VR=25V Total Capacitanc CT 0.9 1.5 pF VR=15V,f=1MHz C139 Rev.A www.gmicroelec.com 1 Production specific...