NGTG30N60FLWG

NGTG30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices Typical Applications Power Factor Correction Solar Inverters Uninterruptable Power Supply (UPS) ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 60 30 Pulsed collector limited by TJmax current, Tpulse Diode Forward Current @ TC = 25°C @ TC = 100°C Diode Pulsed Current Tpulse Limited by TJmax Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C Gate−emitter voltag...