NGTG15N120FL2WG

NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Features Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Optimized for High Speed Switching 10 ms Short Circuit Capability These are Pb−Free Devices Typical Applications Solar Inverter Uninterruptible Power Inverter Supplies (UPS) Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES IC 1200 30 15 V A Pulsed collector current, Tpulse limited by TJmax Gate−emitter voltage Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) ICM 60 A VGE $20 V ±30 Power Dissipation @ TC = 25°C @ TC = 10...