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NGTG12N60TF1G

ON Semiconductor

IGBT

Ordering number : ENA2219 NGTG12N60TF1G N-Channel IGBT 600V, 12A, VCE(sat);1.4V TO-3PF-3L http://onsemi.com Features...


ON Semiconductor

NGTG12N60TF1G

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Ordering number : ENA2219 NGTG12N60TF1G N-Channel IGBT 600V, 12A, VCE(sat);1.4V TO-3PF-3L http://onsemi.com Features VCE(sat)=1.4V typ. (IC=12A, VGE=15V) Low switching loss in higher frequency applications Enhansment type 5μs short circuit capability Adoption of full isolation type package Applications Power factor correction of white goods appliance General purpose inverter TO-3PF-3L Specifications Absolute Maximum Ratings at Ta = 25°C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (DC) VCES VGES IC*1 Limited by Tjmax @ Tc=25°C *2 @ Tc=100°C *2 600 V ±20 V 24 A 12 A Collector Current (Pulse) Allowable Power Dissipation Junction Temperature ICP Pulse width Limited by Tjmax(Ref:ASO graph) PD Tc=25°C (Our ideal heat dissipation condition) *2 Tj 88 A 54 W 150 °C Storage Temperature Tstg - 55 to +150 °C Note : *1 Collector Current is calc...




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