NGTB50N65FL2WAG

NGTB50N65FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Features Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Improved Gate Control Lowers Switching Losses Separate Emitter Drive Pin TO−247−4L for Minimal Eon Losses Optimized for High Speed Switching This is a Pb−Free Device Typical Applications Solar Inverters Uninterruptible Power Supplies (UPS) Neutral ...