NGTB50N60S1WG
IGBT - Inverter Welding
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effectiv...
NGTB50N60S1WG
IGBT - Inverter Welding
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features
TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability This is a Pb−Free Device
Typical Applications
Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current @ TC = 25°C @ TC = 100°C
VCES 600 V
IC A 100 50
Diode Forward Current @ TC = 25°C @ TC = 100°C
IF A 100
50
Diode Pulsed Current TPULSE Limited by TJ Max
Pulsed collector current, Tpulse limited by TJmax
Short−circuit withstand time VGE = 15 V, VCE...
