NGTB45N60S2WG
IGBT - Inverter Welding
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effectiv...
NGTB45N60S2WG
IGBT - Inverter Welding
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features
Low Switching Loss Reduces System Power Dissipation TJmax = 175°C Soft, Fast Free Wheeling Diode This is a Pb−Free Device
Typical Applications
Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current @ TC = 25°C @ TC = 100°C
VCES 600 V
IC A 90 45
Pulsed collector current, Tpulse limited by TJmax
Diode forward current @ TC = 25°C @ TC = 100°C
ICM 180 A
IF A 90 45
Diode pulsed current, Tpulse limited by TJmax
Gate−emitter voltage Transient Gate Emitter Voltage (tp =...
