SMD Type
Transistors
NPN Transistors KTC2016
TO-220
9.90 ± 0.20 (8.70)
ø3.60 ± 0.10
4.50 ± 0.20
1.30
+0.10 –0.05
...
SMD Type
Transistors
NPN Transistors KTC2016
TO-220
9.90 ± 0.20 (8.70)
ø3.60 ± 0.10
4.50 ± 0.20
1.30
+0.10 –0.05
2.80 ± 0.10
(1.70) 1.30 ± 0.10
(3.00) (3.70) 15.90 ± 0.20 18.95MAX.
9.20 ± 0.20 (1.46)
■ Features
● Low Collector Emitter Saturation Voltage. ● Complementary to KTA1036
(45 )
10.08 ± 0.30
13.08 ± 0.20 (1.00)
■ Absolute Maximum Ratings Ta = 25℃
1.27 ± 0.10
123
1.52 ± 0.10
2.54TYP [2.54 ± 0.20 ]
0.80 ± 0.10
2.54TYP [2.54 ± 0.20 ]
10.00 ± 0.20
0.50
+0.10 –0.05
2.40 ± 0.20
1. Base 2. Collector 3. Emitter
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base Current Collector Power Dissipation
Junction Temperature Storage Temperature Range
Ta = 25℃ Tc = 25℃
Symbol VCBO VCEO VEBO IC IB
PC
TJ Tstg
Rating 60 60 7 3 0.5 2 30 150
-55 to 150
Unit V
A W ℃
■ Electrical Characteristics Ta = 25℃
Parameter Collector- base breakdown voltage Collector- em...
