isc Silicon PNP Power Transistors
BD544/A/B/C
DESCRIPTION ·70 W at 25°C Case Temperature ·Complement to Type BD543/A/B...
isc Silicon
PNP Power
Transistors
BD544/A/B/C
DESCRIPTION ·70 W at 25°C Case Temperature ·Complement to Type BD543/A/B/C ·8 A Continuous Collector Current ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD544
-40
BD544A
-60
VCBO
Collector-Base Voltage
V
BD544B
-80
BD544C -100
BD544
-40
VCEO
Collector-Emitter Voltage
BD544A
-60
V
BD544B
-80
BD544C -100
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃ Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
-10
A
70 W
2
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.79 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
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isc Silicon
PNP Power
Transistors
BD544/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD544
-40
V(BR)CEO
Collector-Emitter Breakdown Voltage
BD544A BD544B
IC= -30mA ; IB= 0
-60 -80
V
BD544C
-100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
-0.5 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -1A
-0.5 V
VCE(sat)...
