NPN Silicon Epitaxial Power Transistor
P b Lead(Pb)-Free
Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(...
NPN Silicon Epitaxial Power
Transistor
P b Lead(Pb)-Free
Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to
NPN 2SB507
COLLECTOR 2
BASE 1
3 EMITTER
ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Base Voltage
Collector Current
Total Device Disspation TA=25°C TC=25°C Derate above 25°C
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC
PD
TJ Tstg
2SD313
1 23
1. BASE 2. COLLECTOR
3. EMITTER TO-220
Value 60 60
5.0
3.0
1.75 30 0.24 +150 -55 to +150
Unit V V V A
W W/˚C
˚C ˚C
ELECTRICAL CHARACTERISTICS Characteristics
Collector-Base Breakdown Voltage IC=100µA, IE=0 Collector-Emitter Breakdown Voltage IC=1mA, IB=0 Emitter-Base Breakdown Voltage IE=100µA, IC=0 Collector Cut-Off Current VCB=60V, IE=0 Emitter-Cut-Off Current VEB=60V,IE=0 Emitter-Cut-Off Current VEB=4.0V, IC=0
WEITRON
http://www.weitron.com.tw
Symbol BVCBO BVCEO
...
