2SD1710

Ordering number : ENN7315 2SD1710 NPN Triple Diffused Planar Silicon Transistor 2SD1710 Color TV Horizontal Deflection Output Applications Features High speed(tf=500ns max). High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. Package Dimensions unit : mm 2039D 3.4 16.0 [2SD1710] 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 3.5 20.4 2.8 2.0 2.0 1.0 0.6 Specifications Absolute Maximum Ratings at Ta=25°C 123 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation Junction Temperature Storage Temperature PC Tj Tstg Electrical Characteristics at Ta=25°C Tc=25°C Conditions Ratings 1500 800 6 5 16 3 50 150 --55 to +150 Unit V V V A A W W °C °C Parameter Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff C...